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Short-period GaAs/AlGaAs superlattices, an active region, and a quantum cascade laser heterostructure have been grown by metalorganic vapor phase epitaxy, and their characteristics have been studied by high-resolution X-ray diffraction, transmission electron microscopy, and photoluminescence spectroscopy. The heterostructures have been used to produce quantum cascade lasers emitting near 10 μm. Their...
A quantum cascade laser emitting in the spectral range of 9.7 μm at 77 K has been developed. The laser heterostructure based on GaAs/AlGaAs was grown by the MOCVD technology. In the pulsed operation mode, the threshold current density of ∼2 kA/cm2 and the emission power of above 200 mW have been obtained for the laser of the dimensions of 30 μm × 3 mm.
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