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We have been developing highly radiation-tolerant n + -in-p planar pixel sensors for use in the high-luminosity LHC. Novel n + -in-p structures were made using various combinations of the bias structures (punch-through or polysilicon resistor), isolation structures (p-stop or p-spray), and thicknesses (320μm or 150μm). The 1-chip pixel modules with thin FE-I4 pixel sensors were evaluated...
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