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Structural and optical properties of quantum dots fabricated using diblock copolymer lithography and selective MOCVD growth are reported. Tensile-strained (InxGa1-xAs) and compressively-strained (InAs) QDs on InP exhibit luminescence near 1.4 and 2.1 μm respectively.
We describe in detail the characterization of two high-power photonic transmitters based on two different kinds of high-power photodiodes, one a GaAs/AlGaAs based uni-traveling-carrier photodiode (UTC-PD) and the other a separated- transport-recombination photodiode (STR-PD). The diodes operate under optical pulse excitation at the 800 nm wavelength. Both PDs have the same total depletion layer thickness...
The structure of amorphous compound semiconductor has been constructed successfully by ldquocontinuous random networksrdquo (CRN). Based on the first-principles calculations, the effects of different local disorder on density of states are studied in detail. The results show that the wrong bonds mainly have effect on the deeper energy band and introduce new electron states, and the dangling bonds...
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