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We have investigated the precursor effect of La2O3 cap layers on Vfb tuning and EOT reduction in SiO2/HfO2/TiN gate stacks. The Vfb tuning and EOT reduction correlate with the intermixing of La2O3 and HfO2 dielectrics which forms dipoles at the lower interface between HfO2 and SiO2 IL and the diffusion of La and Hf atoms to the SiO2 IL. The use of La(fAMD)3 precursor for the La2O3 cap layer deposition...
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