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Beryllium was implanted into both n- and p-type 6H-SiC and the samples were subsequently annealed at 1600 o C. Photoluminescence (PL) measurements were performed and PL lines at 420 and 472nm were observed. The PL lines at around 420nm have been detected from various ion implanted SiC samples and have been attributed to transitions involving some implantation induced intrinsic defect labeled...
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