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SOI technologies have long been used for SEU-hardened SRAMs and other radiation-hard circuits. However, to maintain their advantages in the submicron regime, it is essential that the strength of the floating body effects (FBE) and the role of the parasitic bipolar transistor (PBJT) should be minimized. In this work these are achieved by reducing the gain β of the PBJT by controlling the carrier recombination...
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