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We have a number of issues with the above paper ldquoHigh Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Current Exceeding 1 A/mm,rdquo by Y. Xuan, Y. Q. Wu, and P. D. Ye, published IEEE Electron Device Letters in April 2008 which we wish to highlight.
We report well-scaled 50 nm GaAs metamorphic HEMTs (mHEMTs) with DC power consumption in the range 1-150 muW/mu demonstrating fT of 30-400 GHz. These metrics enable the realisation of ultra-low power (<500 muW) radio transceivers for autonomous distributed sensor network applications
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