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InAs 0.6 P 0.4 epilayers grown on InP (100) substrates using two-step growth method by LP-MOCVD were investigated. A low temperature (450 °C) In 0.18 Ga 0.82 As buffer layer was introduced to relax the lattice mismatch between the InAs 0.6 P 0.4 epilayer and the InP substrate. The influence of In 0.18 Ga 0.82 As buffer layer thickness...
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