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We analyze the effect of the lattice constant on the band-gap energy of InxGa1−xN and optimize the structure of the device with a separate-confinement heterostructure. To vary the lattice constants, we change the In molar fraction, which permits us to investigate a wide range of the band gap of the active material employed in diode lasers. InxGa1−xN is a promising active material for high-performance...
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