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High-performance metamorphic high-electron mobility transistors (MHEMTs) using an (InxGa1-xAs)m/(InAs)n superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80-nm gate length exhibited a high drain current density of 392 mA/mm and a transconductance of 991 mS/mm at 1.2-V drain bias. Compared with a regular In_xGa_1 - xAs channel, the superlattice-channel HEMTs...
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