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25.8Gbps Direct Modulation AlGaInAs DFB lasers were demonstrated for lower consumption in a wide temperature range. The DFB lasers achieved excellent eye opening from −20°C to 85°C at low current less than 56.5mA.
SiC power devices were die bonded to a AlN/Cu/Ni(Au) direct bonded copper (DBC) substrate with a Au-Ge eutectic solder in a vacuum reflow system. The long term joint reliability of the bonded chips was evaluated at 330degC in air for up to 1600 hours. The bonded samples were inspected with a micro focus X-ray TV system. The microstructure of the samples was observed and analyzed by the scanning electron...
This paper proposes a novel method for wireless interconnect in three-dimensional (3D) multiple packaging of large scale integrated circuits (LSI). This interconnect consists of micro-strip-line (MSL) on a silicon substrate and slot on a ground plane. A coupling by stacked slots provides the wireless interconnect. The proposed method provides a use of large sized ground plane which reduces the interference...
In this study, we have investigated the effects of Ti buffer layer for the fabrication of MgB2 crystalline film on ZnO (0001) substrate. The Ti buffer layers (thickness of 5-50 nm) and MgB2 films were deposited by molecular beam epitaxy apparatus. The MgB2/Ti bilayers were characterized by in-situ RHEED and ex-situ XRD measurements, and the superconducting properties were studied by magnetic measurements...
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