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A world record-setting efficiency of 35.8% at AM1.5G (x1) has been demonstrated by an InGaP (1.88 eV)/GaAs/InGaAs (0.97 eV) triple-junction solar cell fabricated using the inverted layer transfer process. Lattice-matched top and middle cells are grown first. Then, a lattice-mismatched bottom cell is grown to attain good crystal quality for the top and middle cells. A large stress caused by the increasing...
Piezoelectricity has been playing an important role in recent micro- and nano-electromechanical devices, where it makes possible a highly efficient transaction between mechanical motion and electric signals. Compound semiconductors are known as piezoelectric materials and highly functional micro- and nano-electromechanical devices can therefore be integrated with electronic and optical devices. We...
The structure of the GaAs(001)-2 4 reconstructed surface is studied using medium-energy ion scattering (MEIS). The MEIS profiles clearly show splitting blocking dips, which originate in the surface reconstruction. We have quantitatively determined the atomic displacement from these blocking dips. The topmost As atoms forming the symmetric dimers are displaced laterally 0.55 ±0.05 , and the bond...
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