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We report a novel n-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET) comprising an embedded Metal Source/Drain (eMSD) formed in a quasi-insulating InAlAs region. The InAlAs barrier layer reduces off-state leakage current IOFF significantly. The eMSD consists of conductive Ni-InGaAs and Ni-InAlAs layers, and has a low sheet resistance Rsh of ∼20 Ω/square. This achieves a significant reduction...
We report, for the first time, a simple and cost effective co-integration of strained p and n-FETs using tin (Sn) and mono-carbon (C) implant in Source/Drain (S/D) of p- and n-FETs, respectively, to induce beneficial strain. For the first time, a single laser anneal step was employed to substitutionally incorporate the Sn and C atoms simultaneously into lattice sites. 7 at.% substitutional Sn concentration...
Pure germanium (Ge) source and drain (S/D) stressors are integrated with ultrathin-body (UTB) and nanowire field-effect transistors (FETs). This is the first report of the integration of Ge S/D stressors in FETs. The Ge S/D stressors induce a large compressive stress in the channel, resulting in up to 80% IDsat enhancement in UTB-FETs. Electrical results further show that increased substrate compliance...
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