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Hydrogen plasma cleaning was applied for ZnSe homoepitaxial growth along with a novel wet etching technique for ZnSe substrates. The dependencies of etch-pit density (EPD) on RF power and cleaning temperature were investigated; for RF power below 250 W, the EPD is suppressed to about 1 10 5 /cm 2 , and the optimum temperature range is between 260 and 280°C. The EPD of ZnSe film...
A newly developed buried heterostructure on p-type InP substrate was successfully applied to the fabrication of a 1.3 μm DFB laser diode (LD). Stable CW SLM operation up to 31 mW at 30??C for an LD structure with two as-cleaved facets, and 53 mW at 25??C utilising AR coating, have been achieved.
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