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Prior to contact silicide formation, multiple Ge pre-amorphization implantation (PAI) with reverse retrograde Ge profile was investigated for sub-20-nm FinFETs. Compared with conventional single PAI, N-FinFETs from the new PAI scheme exhibit enhanced drive current by 12%, which can be attributed to decreased total series resistance (${\mathrm {R}}_{\mathrm {{{Total}}}}$ ) by 15% and enhanced peak...
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