The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Array of field-effect transistors (FET) with asymmetric T-gates and floating electrodes fabricated on a single chip was used as terahertz (THz) detector. Nonresonant detection with strong photovoltaic response was realized due to excitation of electron plasma oscillations in the common channel of the FETs array. Voltage responsivities obtained by the array of FETs with floating electrodes surpass...
We report on room-temperature plasmonic detection of the thermal emission from a black body in the terahertz and mid-infrared domains by dual-grating-gate InAlAs/InGaAs/InP high electron mobility transistors (HEMTs). In such detectors, the asymmetric grating gate of a large area acts as an effective antenna that improves the performance in the two spectral domains.
Physics of plasma oscillations and basic principles of plasmonic detection of terahertz radiation in the grating-gate transistor structures with two-dimensional electron channels are considered. It is shown that the grating-gate-transistor plasmonic detectors can be efficiently coupled to terahertz radiation. Plasmonic detection response considerably increases if the electron density in the grating-gate...
Physics of plasma oscillations and basic principles of plasmonic detection of THz radiation in FET structures with 2D electron channels are discussed. Plasmonic devices are practically attractive because they are extremely fast and electrically tunable through the entire THz frequency band by changing electric potentials at metal contacts of the device.
Resonance detection of terahertz radiation by nanometer field-effect transistors GaAs/AlGaAs and transistor structure GaAs/InGaAs with large area slit grating gate has been measured. For these transistors peaks in the resonance photoresponse curve are tunable with gate voltages in accordance with the Dyakonov-Shur theory.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.