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We propose a high-frequency extension of the transmission line model method that allows for independent extraction of open-surface sheet resistance of a semiconductor layer and that under metallization. The method is applied for the characterization of an AlGaN/GaN heterostructure with a high ( ~40%) Al content with and without a top dielectric layer. In both cases, the sheet resistance under the...
Novel design concepts and cutting edge results are presented for high-power AlGaN/GaN Heterostructure Field-Effect Transistor switches for power converters, control and radio-frequency applications. For power switching, the HFET design has to be different from that of power amplifiers in order to minimize the contact resistance and avoid current crowding in the metal electrodes of large-periphery...
Owing to their extraordinarily high thermal conductivities, carbon nanotubes (CNTs) are promising for use in advanced thermal interface materials (TIMs). While there has been much previous research on carbon nanotube thermal properties, there are little data for aligned films of single wall nanotubes. This paper measures the thermal interface resistances of metal-coated vertically-aligned single wall...
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