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We present the responsivity spectra in the 0.2–0.4 THz range at low temperature of a AlGaAs/GaAs field-effect transistor connected to an on-chip integrated antenna. We fabricated asymmetric plasmonic microcavities to obtain down-converted signals from the intrinsic nonlinearity of 2D electron plasma oscillations. Finite-element modeling simulations of the 2D electron oscillations and electromagnetic...
This paper reviews recent advances in graphene plasmonic heterostructures for terahertz (THz) device applications. A double graphene-layer (DGL) core-shell structure with a tunnel-barrier layer is sandwiched between the outer gate stack layers at both sides. When the band offset is aligned to the THz photon energy, the DGL structure can mediate photon-assisted resonant tunneling, resulting in resonant...
We study terahertz excitation of plasmons in a two-dimensional electron system with a periodic metal grating coupler. We assume that a negative electric potential is applied to one of the grating fingers, which results in forming a slit in an otherwise continuous two-dimensional plasmonic system. We analyze numerically the excitation of plasmons in such system and study plasmonic field near the slit...
This paper reviews recent advances in graphene active plasmons toward new types of terahertz lasers. We theoretically discovered and experimentally manifested that the carrier population inversion in graphene results in stimulated emission of plasmons with a giant gain, leading to superradiant terahertz lasing from a structured graphene.
We report on an extremely-high sensitive terahertz (THz) detector based on our original asymmetric dual-grating gate high electron mobility transistors (A-DGG HEMTs) designed and fabricated using InAlAs/InGaAs/InP material systems. The obtained responsivity is 22.7 kV/W at 200 GHz. To the best of our knowledge, this value is the record responsivity ever reported for this frequency range at room temperature.
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