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The SRAM-interface High-speed DRAM (SH-RAM) is an embedded DRAM that can replace almost all embedded SRAMs in SoC fabricated by a 65-nm LSTP embedded DRAM process. This paper describes the SH-RAM compiler that realizes a 1.8-ns random cycle time and a 1.5-ns random access time at 512-Kb macro without area penalty by High-speed Bit Line Operation and Data Line Replica Architecture.
An embedded DRAM macro in a logic compatible 90nm CMOS process is designed with low-noise core architecture and high-accuracy post-fabrication tuning. With a 5fF/cell capacitance, a 61% improvement of sensing accuracy enables 322MHz random-cycle operation and reduces data retention power to 60 /spl mu/W.
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