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TCAD process and device simulations are used to gain physical understanding for the integration of laser- annealed junctions into a 28 nm high-k/metal gate first process flow. Spike-RTA (Rapid Thermal Annealing) scaling used for transient enhanced diffusion (TED) suppression and shallow extension formation is investigated. In order to overcome the performance loss due to a reduced RTA, laser anneal...
A simple and unified fundamental theory on the mechanism of stress memorization technique (SMT) is presented for the first time. This theory is based on the difference in thermal properties of the materials involved in SMT process, i.e., silicon (channel), polysilicon (gate), amorphous silicon (source/drain), SiO2 (gate oxide), as well as Si3N4 (SMT nitride stressor layer), which lead to deformations...
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