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The low noise property of HEMTs was studied, based on the noise power generated in the devices. 0.5 µm- and 0.25 µm-gate HEMTs were fabricated, to study the noise power generated in the intrinsic region of the devices. In order to leave the extrinsic noise power out of consideration, a T-shaped gate structure was developed to make equal the gate-resistances of these devices. It was shown that the...
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