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We present an analysis of a modified double-polysilicon SiGe:C HBT module showing a CML ring oscillator gate delay τ D of 2.5ps, and f T /f max /BV CEo values of 300GHz/350GHz/1.85V (Fox et al., 2008) [1]. A key feature of the HBT module is a connection of the extrinsic and intrinsic base regions by lateral epitaxial overgrowth, which aims to overcome the limits of...
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