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We report on the epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-ІІ superlattices (T2SLs) on GaSb substrates by metalorganic chemical vapor deposition. For InAs/GaSb strained T2SLs, interfacial layers were introduced at the superlattice interfaces to compensate the tensile strain and hence to improve the overall material quality of the superlattice structures. The optimal morphology...
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