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Carbon-doped SiGe (SiGe:C) bipolar devices have been developed and integrated in to a 0.25μm CMOS platform. The resulting SiGe:C BiCMOS technology offers a wide spectrum of active and passive devices for wireless and wired communication systems. A high-performance variant of the bipolar transistor has been derived from the standard transistors by reduction of some transistor dimensions. With these...
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