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Excitation energy dependence of luminescence spectra of a-Si:H well layers with thicknesses of 5, 13, 25, 50 and 400 9 in a-Si:H/a-Si 3 N 4 :H multilayers has been investigated to obtain thermalization gaps. The obtained thermalization gap of the a-Si:H well layer increases with decreasing well layer thickness in the well layers thinner than 50 9, which has been explained from the...
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