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GaSb mesa photodiodes have been fabricated by Zn diffusion from spin-on film sources. For the first time, breakdown voltages up to 30 V are reported on diffused GaSb diodes. Broadband responsivity with an external quantum efficiency of 60% at 1.7 ?m has been obtained without antireflection coating.
We have developed a GaSb photodiode for receiving the 1.73 ?m radiation of a solid-state laser (Er:YLF). The diode layers have been grown by LPE on (100)-oriented Te-doped GaSb substrates. The peak value of the responsivity of the diodes is 0.55 A/W at a wavelength of 1.73 ?m corresponding to a quantum efficiency of 40%. The best RA product of the diodes is 83 ?cm2. The data are obtained without anti-reflection...
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