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A simple parameter extraction technique is presented for ultra-thin oxide MOSFETs. The technique is based on a suitable MOSFET mobility model and extracts threshold voltage (V t ), mobility (μ 0 ), and two mobility degradation parameters θ 1 and θ 2 . It has been found that the extracted parameters accurately describe the measured current voltage characteristics for...
Computer simulations have been carried out to systematically evaluate and compare device characteristics for various profile doped elevated source/drain (ESD) 0.25 μm channel-length MOSFET structures. In particular, characteristics for MOSFETs with a gradual profile doped ESD and for MOSFETs with an abrupt profile N + -N - doped ESD are examined in detail. Design considerations for...
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