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Herein, a novel technique to monitor the quality and reliability of thin nano‐scale dielectric films is suggested. The method is based on the modification of the current stress technique (J‐Ramp) described in the corresponding JEDEC standard. The proposed technique, in addition to the J‐ramp tests, allows monitoring a change of charge state of the gate dielectric during all the tests. To implement...
Scaling the planar NAND flash cells to the 20 nm node and beyond mandates introduction of inter‐gate insulators with high dielectric constant (κ). However, because these insulators provide a smaller electron barrier at the interface with the poly‐Si floating gate, the program window and the retention properties of these scaled cells are jeopardized. To reduce the charge loss from the floating to...
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