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In the pursuit of devices with reduced temperature-dependent emission wavelengths, TlInGaAsN double quantum well (DQW) structures with different barriers were grown on GaAs substrates by MBE and investigated. Although TlGaAsN barriers gave rise to higher Tl incorporation, as compared to TlGaAs barriers, the presence of lot of dislocations and very rough interfaces reduced the PL characteristics. The...
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