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Terahertz (THZ) detection by field effect transistors (FETs) has been paid great attention in recent years. This paper outlined the numerical study of terahertz radiation detection by FETs in our group, including the fundamental THz detection model, detection model with two sources, heterodyne detection model and optical beating model. These study results demonstrated the potential application of...
In this paper, a novel field effect nanowire MOS transistor taking advantage of both dual-material gate and surrounding gate is proposed and performance characteristics are demonstrated numerically in detail. Surrounding-gate transistor is known to be used to enhance the electrostatic control of the channel, and dual-material-gate structure is extended from split-gate field effect transistor to obtain...
A diffused pneumatic silencer had been widely used in the pneumatic fields due to its small dimensions and high level of performance in noise reduction. A numerical simulation of its interior and exterior flow field was important for studying the gas flow in the silencer and the flow structure outside the silencer, as well as for understanding the mechanism of the silencer’s noise reduction. A porous...
In this paper an analytic channel potential-based model is proposed to predict the dynamic depletion behavior of surrounding-gate (SRG) MOSFETs with arbitrary doping level. The key input voltage equation is derived out by solving Poisson's equation approximately with arbitrary doping in the cylindrical coordinate. Combined with the surface-centric potential relationship, the electrostatic potential...
The detector response characteristics of the field effect MOS transistor (MOSFET) to modulated terahertz radiation signal are studied in detail in this paper by a numerical simulation program developed from the basic hydrodynamic equations which govern the terahertz signal transport in the MOSFET and a universal MOSFET charge density equation which makes this program suitable in a wide range of operation...
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