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Silver is a potential candidate for interconnect materials in advanced interconnect technology due to its excellent conductivity and better electromigration resistance than aluminium. In this study, the fabrication of 10μm-linewidth silver patterns has been carried out by applying reactive ion etch in an oxygen plasma. The influence of rf-power supply and etch time on the etch effect has been investigated...
The Ag lines on Ti/SiO 2 /Si stack structures were fabricated by using conventional photolithography and a reactive ion etch (RIE) in an O 2 plasma, and subsequently encapsulated by annealing in a flowing NH 3 ambient. A thin TiN(O) layer formed at the Ag surface and a Ti(O)/Ti 5 Si 3 bilayer formed at the initial Ti/SiO 2 interface. Electromigration...
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