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We address contact plug structure with low resistance applicable to NiSi system. It consists of thin barrier layer, prepared by NH3 plasma nitrization of PE-TiCU CVD Ti (PE-TiN/Ti) at process temperature of 450degC, and W-plug with B2H6 based nucleation layer. This process enables us to reduce contact resistance down to 50% without "volcano" type defect issues due to WF6 attacking.
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