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A method of integrating high performance and low-cost Cu ultra low-k (ULK) SiOC(k=2.0) hybrid interconnects with SiOC(k=2.65) hard mask structure has been developed. The method combines Cu/ULK interconnects with the self-formed MnOx barrier layer that was shown to have lower resistance and higher reliability than Cu alloys. Moreover, dual-damascene (DD) interconnects with MnOx barrier layer showed...
(Bi1/2Na1/2)TiO3 (BNT) thin films were prepared on Pt/TiOx/SiO2/Si substrates by chemical solution deposition (CSD). BNT precursor thin films crystallized in the perovskite BNT phase above 650degC with a random orientation. The synthesized BNT thin films showed typical ferroelectric P-E hysteresis and field-induced strain loops. The Pr and Ec values of the 700degC-annealed BNT thin films were approximately...
Sub-micrometre p/sup +/-gate surface-channel pMOSFETs have been successfully fabricated with 6-10 nm-thick nitrided SiO/sub 2/ gate films formed in an N/sub 2/O ambient. The devices have excellent reliability in hot-carrier-induced degradation because of the good abilities of N/sub 2/O-nitrided SiO/sub 2/ films in both the blocking of boron penetration and the reduction in electron traps.<<ETX>>
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