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A scalable multi-VT enabled RMG CMOS integration process with highly conformal ALD TiN/TiAl/TiN is described. The multi-VT is implemented by metal gate tuning using two different options. The first relies on bottom-barrier thickness control, the second on implantation of nitrogen into the work function metal. A shift in the effective work function (eWF) of ∼400 mV is realized by adjusting the TiN...
Band alignment of TiN/HfO2/SiO2/Si stack is systematically investigated by X-ray photoelectron spectroscopy. The differences of Si 2p binding energies between SiO2 and Si substrate are experimentally found to decrease with the sequence of SiO2/Si, 4 nm HfO2/SiO2/Si and 2 nm HfO2/SiO2/Si stacks. The p-type Schottky barrier heights at TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack are experimentally estimated...
Dispersion strengthened Nb3Sn and regular Nb3Sn composites were fabricated. Their mechanical and superconducting properties were measured and compared. An increase in strength up to 10% and Jc (18 T, 4.2 K) up to 28% was achieved. The nanoparticle strengthened Cu, as a replacement of Cu, could be co-deformed with Nb to make Nb3Sn wire without changing the volume fractions of Nb and Sn and heat treatment...
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