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Variations of recombination lifetime, with fluence of the reactor neutrons from 10^{12} to 3×10^{16} n/cm^2, in the magnetic field applied Czochralski grown Si samples are examined by the contactless transient techniques of the microwave probed photoconductivity and dynamic gratings. A nearly linear decrease in lifetime from few microseconds to about 200 ps within the examined range of neutron irradiation...
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