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The effects of annealing on n-Si/n-4H-SiC junctions made by the surface activated bonding were investigated. Both the forward and reverse characteristics were improved by annealing at higher temperatures.
Lithium doped K0.5Na0.5NbO3 films were fabricated by chemical solution deposition on Pt/TiO2/SiO2/Si substrates. Homogeneous and stable precursor solutions were prepared by controlling the reaction of starting metal alkoxides. Perovskite KNN single phase thin films were successfully synthesized on Pt/TiOx/SiO2/Si substrates. The 1.2 mum-thick KLNN film annealed at 650degC exhibited a ferroelectric...
(Bi1/2Na1/2)TiO3 (BNT) thin films were prepared on Pt/TiOx/SiO2/Si substrates by chemical solution deposition (CSD). BNT precursor thin films crystallized in the perovskite BNT phase above 650degC with a random orientation. The synthesized BNT thin films showed typical ferroelectric P-E hysteresis and field-induced strain loops. The Pr and Ec values of the 700degC-annealed BNT thin films were approximately...
The time evolution of graphitization was analyzed based on the structural and magnetic properties of nanodiamond samples annealed at 1600°C for various time intervals. High resolution TEM and XRD show that the nanodiamond particles are converted to spherical onions for short annealing time intervals, and then they are completely transformed to polyhedral nanographite through the annealing for 120min...
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