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The ruggedness of SiC pn diode was investigated. The SiC pn diode was confirmed to operate at over 800°C, a higher temperature than Si device's destruction temperature, and to endure a large current of over 1000A (2000A/cm2) per one chip. The resistance of the diode showed a positive temperature coefficient until its destruction. This was different from the destruction of Si pn diodes.
The ruggedness of SiCGT (SiC Commutated Gate Turn-off Thyristor) was investigated. The SiCGT was confirmed to operate at over 1200°C, a higher temperature than Si device's destruction temperature. The SiCGT endured a large current of over 2000A (2470A/cm2) per one chip. Positive temperature coefficient resistor behavior could be found during the destruction of SiCGT, which was different from the destruction...
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