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W-band GaN amplifiers developed for the NASA Earth Science Technology Office, ESTO, enable compact active electronically steerable arrays (AESA's) for cloud Doppler radar. This paper describes the design fabrication and test of 100 nm GaN HEMT low noise amplifiers for NASA's latest 3-band Doppler radar instrument concept. Our results show state-of-the-art performance for a 92 GHz to 96 GHz channel...
An advanced high power, high frequency GaN semiconductor process has made possible the design and fabrication of W-band power amplifier MMICs with unprecedented performance. The key enabling semiconductor technology is a 150 nm T-gate GaN HEMT with an output power exceeding 300mW and a peak PAE (power added efficiency) of 37%. With this process, W-band power amplifier MMICs have been designed and...
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