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We summarize in a general review all the studies performed by our group in the last years in the field of radiation hardening of silicon detectors for High Energy Physics experiments. Test structures (silicon p–i–n diodes) were irradiated by 16MeV, 27MeV, 34MeV and 24GeV protons, and by fast neutrons from a nuclear reactor and from the 9 Be(d,n) 10 B nuclear reaction. We will show...
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