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Magnetic tunnel junctions (MTJs) using perpendicular magnetic anisotropy (PMA) in CoFe(B)/ MgO interface have attracted much attention for high density magnetoresistive random access memory (MRAM) with advantages of scale-down in driving current using for spin transfer torque (STT). In perspective of reliability, further development of the magnetic anisotropy energy (Ku) is required to improve the...
Ferromagnetic materials with perpendicular magnetic anisotropy (PMA) have great attention due to the high thermal stability and low switching current density for next generation memory devices such as spin-transfer-torque magnetic random access memory (STT-MRAM). The amorphous CoSiB/Pt multilayers are one of PMA candidates as STT-MRAM free layers and domain wall (DW) logic devices.[1] In this paper,...
Anisotropic magnetoresistance (AMR) effect in Pt/YIG system where only Pt contributed to charge transport causes much attentions. Chien regarded that the Pt has been magnetized by the YIG due to magnetic proximity effect (MPE). In contrast, Saitoh proposed a new mechanism entitled as spin Hall magnetoresistance (SMR) to explain the AMR in Pt/YIG. The key of SMR is the spin current generated by SHE...
Asymmetric coil sets for wireless stationary electric vehicle (EV) chargers, which has significantly larger lateral tolerance than previous ones, is proposed. The pick-up coil set is much smaller than the power supply coil set, thereby allowing large lateral and longitudinal displacements as well as robustness to air-gap displacement. Electromagnetic field (EMF) is reasonably reduced by arranging...
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