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A quantitative description of the dynamics of silicon wafer direct bonding is proposed, and the contact wave for bonding front propagation is modeled as a function of time. The changes in exhaust gas power, accumulated deformation power and wafer surface energy during bond processing have been studied systematically, and the governing differential equation of the contact wave position is deduced from...
Ultraviolet (UV) exposure process, as an additional process following traditional wet chemical activation processes, was applied to low temperature hydrophilic silicon wafer direct bonding. The UV source emitted mixed spectrum of light with 254 nm and 185 nm wavelength. The comparative trial was performed to investigate the effects of additional UV exposure and to optimize the exposure time. Infrared...
In recent years, low temperature wafer direct bonding has become one of the key fabrication methods for preparing integrated semiconductor materials (such as SOI, GaAs/InP integration) and packaging MEMS as well as optic-electro devices, especially for those with 3D structures. Mechanical quality, surface chemistry and manufacturing process flow are main aspects that determine the bond quality. When...
It has been widely accepted that the threshold of surface roughness for low temperature hydrophilic wafer bonding is 0.5nm. However, we have proven that wafers with higher surface roughness can be bonded. By the aid of proper contact pressure, we have bonded the wafers with roughness of 1.0nm successfully and found that thinner wafers were easier to be bonded than thick ones whereas wafers with thickness...
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