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The selective-area growth (SAG) of GaN nanocolumns by RF-plasma-assisted molecular-beam epitaxy is demonstrated by the use of Ti mask patterns on (111) Si substrates. At the growth temperature of 935 C, the GaN nanocolumns grew only on the stripe windows where Si was exposed, and the growth of nanocolumns on the Ti surface was completely suppressed. The SAG of GaN occurred above approximately 900...
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