The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Nonlinear dynamics of free-carriers in direct bandgap semiconductors at terahertz (THz) frequencies is studied using high power, few-cycle pulses. The physical mechanisms that give rise to such dynamics will be discussed in details.
Nonlinear dynamics of free-carriers in direct bandgap semiconductors at terahertz (THz) frequencies is studied using high power, few-cycle pulses. Techniques as Z-scan and THz-pump/THz-probe are employed to explore nonlinear interactions in both n-doped and photoexcited systems. The physical mechanism that gives rise to such interactions will be discussed in details.
We study ultrafast hot electron transport in n-doped InGaAs using polarization-sensitive nonlinear THz-pump/THz-probe spectroscopy. We observe an anisotropic effective mass for hot electrons due to the nonparabolicity of the conduction band.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.