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The performances and the results of the qualification plan of the new high power GaN HEMT process GH25-10 are summarized in this paper. This technology would be the first ¼ gate length process qualified in Europe on 4” SiC substrate and will be fully open in foundry mode mid of 2014. It addresses applications up to 20 GHz with state of the art figure of merits in term of power density, gain, efficiency...
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