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Growth of 6H–SiC on patterned seeds with the vertical sidewalls composed of {11–20} and {1–100} faces by a sublimation method at 1700–2000°C was studied. Anisotropy in lateral growth rates was observed, i.e the growth rate towards <11–20> was faster than that along <1–100>. It was found that free lateral growth on mesas was accompanied by a sharp decrease in the density of threading dislocation...
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