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InGaAs channel FinFETs with self-aligned molybdenum (Mo) contacts was demonstrated using a gate-last process. By realizing Mo contacts on in situ doped n ++ InGaAs source and drain and self-aligned to channel, the FinFETs achieved series resistance of ∼250Ωμm, which is the lowest value reported-to-date for InGaAs non-planar n-MOSFETs. A FinFET with channel length of 500nm and equivalent oxide...
To achieve high drive current for III–V Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) in future technology nodes, potential performance bottlenecks such as high series resistance need to be addressed. In this paper, we review several self-aligned metallization technologies available for reducing the source/drain series resistance in planar and multiple-gate III–V MOSFETs. Novel approaches...
We report the demonstration of an ultra-thin-body In0.7Ga0.3As-on-nothing N-MOSFET where a self-aligned cavity is formed right beneath the channel layer. Self-aligned Pd-InGaAs source/drain (S/D) contacts were integrated. The gate length LG of 130 nm is the smallest achieved with self-aligned contacts. With effective reduction of subsurface leakage current by the III–V-on-nothing device structure,...
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