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High dielectric constant TiSiOx thin films are produced by reactive sputtering under different oxygen partial pressure ratio (PO2) from 15% to 30%. All the TiSiOx films show an excellent transmittance value of almost 95%. The TiSiOx film has a low leakage current density by optimizing oxygen partial pressure, and the leakage current density of TiSiOx film under PO2 of 20% is 4.88×10−7A/cm2 at electrical...
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