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In this study, we report on a novel approach to produce ∼12nm thick few-layer monoclinic 1T’-MoTe2 films. The deposition method comprised sputtering of Mo, molecular beam epitaxy of Te, and rapid thermal processing to effect tellurization of the Mo into 1T’-MoTe2. The heating rate and annealing time are the critical factors. 30°Cs−1 heating rate and 2min annealing at 470°C were adopted in this work...
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