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Low-resistance ohmic contacts are essential to improve the performance of pentacene-based electronic and optoelectronic devices. In this study, we reported ohmic contact formation at the indium tin oxide (ITO)/pentacene and indium cerium oxide (ICO)/pentacene interfaces. According to the observed results from current–voltage and Kelvin probe measurements, we found that the lower contact resistivity...
The feasibility of the Al/Mo/Ni/(PbSn) as a solder bump system on a silicon wafer was investigated in terms of metals interdiffusion. The interdiffusion study was conducted at 150 °C for up to 900 h. The solder bump structure investigated comprises a 300 or 600 nm Mo film with a fixed thickness of 500 and 200 nm for the Al and Ni films, respectively. The results of Auger electron spectroscopy depth...
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