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We investigated the changes in the preferred orientation and microstructure of ZnO:In films with increasing In content. ZnO and ZnO:In films with In contents of up to 50 at.% were deposited on Si (111) substrates by using pulsed laser deposition and were subsequently characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The structural...
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